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TGQ203 SSD

Industrial PCIe Gen4 NVMe SSD for mission-critical embedded and edge computing

PCIe Gen 4x4, NVMe 2.0, M.2 2280 SSD
Capacities ranging from 512 GB to 4 TB
Wide-Temperature Operation from -40°C to +85°C
  • Capacity
    512 GB 1 TB2 TB4 TB
  • Flash Type
    3D TLC
  • Operating Temperature
    -40°C to +85°C

Overview

The BIWIN TGQ203 SSD features a PCIe Gen 4 x4 interface and supports NVMe 2.0, delivering high-performance storage in capacities from 512 GB to 4 TB. Built for mission-critical industrial applications, it integrates a comprehensive set of reliability features, including wide-temperature operation (-40°C to +85°C), overvoltage and overcurrent protection, advanced data protection mechanisms, and S.M.A.R.T. health monitoring. Combining exceptional performance consistency with industrial-grade endurance, the TGQ203 SSD delivers secure, high-speed data storage and acceleration across diverse environments, including edge computing, intelligent surveillance, medical systems, rail transportation, energy automation, and AI training platforms.

  • 01

    High Speed Operation, Consistent Performance

    Featuring a PCIe Gen 4x4 interface and support for the NVMe 2.0, the TGQ203 SSD delivers sequential read/write speeds of up to 7,100/6,400 MB/s, providing the high-throughput performance required by edge AI applications. Leveraging TLC direct-write technology, it maintains consistent and reliable performance even in complex and demanding industrial environments.
  • 02

    High Capacity for Data-Intensive Applications

    Built with advanced 3D TLC NAND and multi-layer stacking technology, the TGQ203 SSD is available in capacities from 512 GB up to 4 TB, providing ample storage for data-intensive workloads. It is particularly suited for applications requiring large-scale data retention, including video surveillance, sensor data logging, AI training, and other data-heavy industrial storage deployments.
  • 03

    Space-Efficient Design for Compact Systems

    Featuring a single-sided component layout and a compact PCB design, the TGQ203 SSD is optimized for industrial systems with limited space. Its slim profile and small footprint streamline integration into a wide range of compact devices, allowing for greater design flexibility in space-constrained applications.
  • 04

    Engineered for Reliability in Harsh Environments

    Built with carefully selected industrial-grade wide-temperature and anti-sulfuration components, the TGQ203 SSD achieves ANSI/ISA 71.04 G3 anti-sulfuration compliance and incorporates OCP (Over-Current Protection) and OVP (Over-Voltage Protection) to ensure dependable operation in demanding environments. Advanced reliability technologies, including internal RAID, SRAM ECC, and a 4K LDPC error-correction engine work together to safeguard data integrity and maintain long-term operational stability, minimizing the risk of uncorrectable errors and data loss.
  • 05

    Custom Options for Diverse Requirements

    The TGQ203 SSD supports a wide range of hardware, firmware, and service-level customization options, including one-click secure erase, S.M.A.R.T. monitoring, conformal coating processes (including protective coating, anti-sulfuration treatment, and protective film coating), and interface speed configuration. These flexible customization capabilities enable the TGQ203 SSD to meet the unique demands of diverse industrial applications and deployment environments.

  • S.M.A.R.T.

  • Internal RAID

  • SRAM ECC

  • LDPC Error Correction

  • Anti-Sulfuration

  • OVP/OCP

  • Industrial Automation

    Industrial Automation

  • Edge Servers

  • Edge AI Systems

  • Data Acquisition Systems

  • Network Communication

    Network Communication

Specifications

Latest Update: 2026/07/10
Product Line
SSD
Product Grade
Industrial Wide-temp
Model Name
TGQ203
Interface
PCIe Gen4×4, NVMe 2.0
Form Factor
M.2 2280
Flash Type
3D TLC
Firmware
TLC Direct Write
DRAM Cache
DRAM-less
Capacity
512 GB
1 TB
2 TB
4 TB
Sequential Read (Up to)
7,100 MB/s
Sequential Write (Up to)
6400 MB/s
Random Read 4K (Up to)
1,050K IOPS
Random Write 4K (Up to)
1,050K IOPS
Read Power Consumption (Max.)
2.7 W
4.0 W
5.6 W
4.6 W
Write Power Consumption (Max.)
1.9 W
3.8 W
4.9 W
4.5 W
Idle Power Consumption (Max.)
21 mW
22 mW
53 mW
60 mW
Dimensions
80.00 x 22.00 x 2.15 mm
Operating Temperature
-40°C to +85°C
Storage Temperature
-40°C to +95°C
Endurance
3,000 P/E cycles
MTBF
>2,000,000 hours
Certifications
CE, FCC, RoHS, HF, REACH, WEEE
TBW (Up to)
600 TBW
1200 TBW
2400 TBW
4800 TBW
Warranty
3-Year Limited

Order Information

Capacity

512 GB
1 TB
2 TB
4 TB

Part Number

TG80I51223S2T
TG80I1T223S2T
TG80I2T223S2T
TG80I4T223S2T

Power Loss Protection

Firmware Based
Firmware Based
Firmware Based
Firmware Based
1. Tested by BIWIN labs. Actual performance may vary due to systems, devices, or environment.
2. Maintenance and future updates are required throughout the product lifecycle. Specifications are subject to change without notice.
3. The pictures are for illustration only. Actual products may vary due to product enhancements or changes.
4. Not all products are sold in all regions of the world.
5. As used for storage capacity, one megabyte (MB)= one million bytes, one gigabyte (GB) = one billion bytes, and one terabyte (TB) = one trillion bytes. Total accessible capacity varies depending on the operating environment. As used for buffer or cache, one megabyte (MB) = 1,048,576 bytes. As used for transfer rate or interface, megabyte per second (MB/s) = one million bytes per second, and gigabyte per second (GB/s) = one billion bytes per second.
6. MTBF = Mean Time Between Failures based on internal testing using the Telcordia stress testing standard.
7. Please visit www.biwintechnology.com for warranty details in your region.
8. For more information, please contact sales@biwintech.com.

Documents

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  • All Types
  • DRAM Module
  • Embedded
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Date
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SSD BIIWN TGQ203 SSD Specifications 2026-07-10 Download

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BIWIN produces high quality NAND flash storage and is now known in embedded, consumer, corporate and industrial segments for its independent development capabilities in hardware, software, firmware and storage algorithms.

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